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| HUR2960 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode HUR2960 VRSM V 600 VRRM V 600 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1.3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 30 250 0.2 0.1 -55...+175 175 -55...+150 165 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR2960 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.26 1.61 0.9 0.5 Unit uA mA V K/W ns A IR VF RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 35 6 FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2960 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 IF 50 3000 T = 100C nC VVJ = 300V R 2500 Qr IRM 2000 50 A 40 TVJ= 100C VR = 300V TVJ=150C 40 30 1500 1000 500 10 TVJ=100C 30 20 10 0 0.0 IF= 60A IF= 30A IF= 15A IF= 60A IF= 30A IF= 15A 20 TVJ=25C 0.5 1.0 1.5 VF V2.0 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 130 ns 120 Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 1.2 us tfr 2.0 TVJ= 100C VR = 300V 1.5 Kf 1.0 trr 110 100 IF= 60A IF= 30A IF= 15A 10 tfr VFR 0.9 0.6 IRM 90 0.5 5 0.3 Qr 80 70 0 0 200 400 600 -diF/dt 800 A/us 1000 0 TVJ= 100C IF = 30A 200 400 0.0 600 A/us 1000 800 diF/dt 0.0 0 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 ZthJC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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